Hall Coefficient Formula |
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\( R_h \;=\; \dfrac{ E_h }{ J \cdot B }\) (Hall Coefficient) \( E_h \;=\; R_h \cdot J \cdot B \) \( J \;=\; \dfrac{ E_h }{ R_h \cdot B }\) \( B \;=\; \dfrac{ E_h }{ R_h \cdot J }\) |
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| Symbol | English | Metric |
| \( V_h \) = Hall Coefficient | \(ft^3\;/\;F\) | \(m^3\;/\;C\) |
| \( E_h \) = Hall Electric Field | \(N\;/\;C\) | \(V\;/\;m\) |
| \( J \) = Electric Current Density | \(A\;/\;in^2\) | \(A\;/\;mm^2\) |
| \( B \) = Magnetic Field Strength | \(G\) | \(T\) |
Hall coefficient is a material-specific constant that characterizes the strength of the Hall effect in a given conductor or semiconductor. It is defined as the ratio of the induced electric field across the material to the product of the current density and the applied magnetic field. The Hall coefficient provides information about the type of charge carriers in a material whether they are positive holes or negative electrons as well as their density. A positive Hall coefficient indicates that the dominant charge carriers are holes, while a negative value shows that electrons are the majority carriers. Since it depends on both the sign and concentration of charge carriers, the Hall coefficient is widely used in solid-state physics and electronics to investigate electrical properties of materials and to determine carrier density in semiconductors.
